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High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating

  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
  • High Purity 99.97% Tungsten Target Ground Surface Condition For Sputtering Coating
Model Number Tungsten Target
Minimum Order Quantity Negotiate
Price Negitionable
Packaging Details Standard export cartons
Delivery Time 30 days after receiving down payment
Payment Terms L/C, D/A, D/P, T/T
Supply Ability 10000sets/month

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Product Details
Name Tungsten Target Shape Round
Material Tungsten Chemical Composition 99.97%
Surface Condition Lathed, Ground,polishing Or Mirror Polishing Application Sputtering Coating
High Light

Ground Tungsten Target

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Sputtering Coating Tungsten Target
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Product Description

High Purity 99.97% Tungsten Target For Sputtering Coating

 

Introduction


1. Tungsten sputtering target adopts best-demonstrated techniques including X-ray fluorescence (XRF), glow discharge mass spectrometry (GDMS), and inductively coupled plasma (ICP);
2. Tungsten target from Achemetal is provided with high purity up to 99.97%, density 18.8-19g/cm3, homogeneous organization structure, and fine grain;
3. Our tungsten sputtering target has been approved by the ASTM B 760-2007 and GB 3875-2006.

 

PARAMETER

 

OD(mm)

ID(mm)

Length(mm)

Custom Made

140-300

120-280

100-3300

 

 

Model Number

W1

Shape

customized

Chemical Composition

99.95% W

 

Feature

 

1. High density
2. High wear-resistant
3. High thermal conductivity with low thermal expansion coefficient

 

Specification

 

Atomic number

74

CAS number

7440-33-7

Atomic mass

183.84 [g/mol]

Melting point

3420 °C

Boiling point

5555 °C

Density at 20 °C

19.25 [g/cm3]

Crystal structure

Body-centered cubic

Coefficient of linear thermal expansion at 20 °C

4.410-6[m/(mK)]

Thermal conductivity at 20 °C

164 [W/(mK)]

Specific heat at 20 °C

0.13 [J/(gK)]

Electrical conductivity at 20 °C

18.2106[S/m]

Specific electrical resistance at 20 °C

0.055 [(mm2)/m]

 

APPLICATIONS

 

semiconductor

chemical vapor deposition (CVD)

physical vapor deposition (PVD) display

 

Tags:

Ground Tungsten Target

Sputtering Coating Tungsten Target